Composition dependent valence band order in c-oriented wurtzite AlGaN layers-Reference-Cited by-同舟云学术

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Composition dependent valence band order in c-oriented wurtzite AlGaN layers

Published:2014-09-21 Issue:11 Volume:116 Page:113506
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Neuschl B.¹,Helbing J.¹,Knab M.¹,Lauer H.¹,Madel M.¹,Thonke K.¹,Meisch T.²,Forghani K.²,Scholz F.²,Feneberg M.³^ORCID

Affiliation:

1. Institute of Quantum Matter / Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm, Germany

2. Institute of Optoelectronics, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm, Germany

3. Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany

Funder

Carl Zeiss Meditec AG (Carl Zeiss Meditec)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4895995

Reference50 articles.

1. Optically pumped UV lasers grown on bulk AlN substrates

2. Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

3. Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors

4. Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

5. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

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1. The Influence of Alloy Disorder Effects on the Anisotropy of Emission Diagrams in (Al,Ga)N Quantum Wells Embedded into AlN Barriers;physica status solidi (b);2024-05-30

2. Excitons in (Al,Ga)N quantum dots and quantum wells grown on (0001)-oriented AlN templates: Emission diagrams and valence band mixings;Journal of Applied Physics;2023-11-16

3. High performance and high yield sub-240 nm AlN:GaN short period superlattice LEDs grown by MBE on 6 in. sapphire substrates;Applied Physics Letters;2023-07-31

4. Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes;Light: Science & Applications;2021-06-16

5. Origin of defect luminescence in ultraviolet emitting AlGaN diode structures;Applied Physics Letters;2021-05-17

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