Highly transparent and low resistance gallium-doped indium oxide contact to p-type GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1999012
Reference18 articles.
1. Effect of alcohol-based sulfur treatment on Pt Ohmic contacts top-type GaN
2. Interfacial Reaction of Ni/Pt/Au Contact Schemes to p‐Type GaN
3. Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices
4. InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts
5. Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN
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3. Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN;Journal of Applied Physics;2015-10-21
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