Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4869137
Reference31 articles.
1. Effects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxide
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3. Nitride-Based LEDs With an SPS Tunneling Contact Layer and an ITO Transparent Contact
4. Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes
5. Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN
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