Effects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2737122
Reference8 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Indium tin oxide contacts to gallium nitride optoelectronic devices
3. Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN
4. InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts
5. Brightness enhancement of ITO/GaN LEDs by self‐aligned micro‐net structures
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