Brightness enhancement of ITO/GaN LEDs by self‐aligned micro‐net structures-Reference-Cited by-同舟云学术

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Brightness enhancement of ITO/GaN LEDs by self‐aligned micro‐net structures

Published:2005-04-11 Issue:7 Volume:2 Page:2920-2923
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Chang Kow‐Ming,Chu Jiunn‐Yi¹,Cheng Chao‐Chen²,Chu Chen‐Fu²

Affiliation:

1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan 300

2. Highlink Technology Corporation, Hsinchu, Taiwan 300

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461550

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of sputtering deposition process of indium tin oxynitride on surface damage of gallium nitride film;Superlattices and Microstructures;2017-09

2. Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes;Superlattices and Microstructures;2017-01

3. Study of MgxCd1−xO applying density functional theory: Stability, structural phase transition and electronic properties;Journal of Solid State Chemistry;2013-08

4. Effects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxide;Applied Physics Letters;2007-04-30

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