Soft breakdown characteristics of ultralow-k time-dependent dielectric breakdown for advanced complementary metal-oxide semiconductor technologies-Reference-Cited by-同舟云学术

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Soft breakdown characteristics of ultralow-k time-dependent dielectric breakdown for advanced complementary metal-oxide semiconductor technologies

Published:2010-09 Issue:5 Volume:108 Page:054107
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chen Fen,Shinosky Michael

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3476292

Reference18 articles.

1. Proceedings of 45th Annual IEEE Reliability Physics Symposium;Chen F.,2007

2. Proceedings of 43rd Annual IEEE Reliability Physics Symposium;Chen F.,2005

3. Dominant Factors in TDDB Degradation of Cu Interconnects

4. Proceedings of 43rd Annual Reliability Physics Symposium;Haase G.,2005

5. Proceedings of 44th Annual IEEE Reliability Physics Symposium;Suzumara N.,2006

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3. TEM Investigation of Time-Dependent Dielectric Breakdown Mechanisms in Cu/Low-k Interconnects;IEEE Transactions on Device and Materials Reliability;2016-12

4. Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability;Microelectronics Reliability;2016-08

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