Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in n-type 4H– and 6H–SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1366660
Reference35 articles.
1. Optimum semiconductors for high-power electronics
2. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
3. Monte Carlo calculations of the temperature‐ and field‐dependent electron transport parameters for 4H‐SiC
4. Calculations of the temperature and field dependent electronic mobility in β-SiC
5. Monte Carlo simulation of electron transport in 4H–SiC using a two‐band model with multiple minima
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