Effect of gallium nitride template layer strain on the growth of InxGa1-xN∕GaN multiple quantum well light emitting diodes-Reference-Cited by-同舟云学术

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Effect of gallium nitride template layer strain on the growth of InxGa1-xN∕GaN multiple quantum well light emitting diodes

Published:2004-08 Issue:3 Volume:96 Page:1381-1386
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Johnson M. C.,Bourret-Courchesne E. D.,Wu J.,Liliental-Weber Z.,Zakharov D. N.,Jorgenson R. J.,Ng T. B.,McCready D. E.,Williams J. R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1766407

Reference22 articles.

1. Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths

2. Self-pulsation in InGaN laser diodes with saturable absorber layers

3. Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate

4. Composition dependence of polarization fields in GaInN/GaN quantum wells

5. Solid phase immiscibility in GaInN

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5. Investigation of Modulation Bandwidth of InGaN Green Micro-LEDs by Varying Quantum Barrier Thickness;IEEE Transactions on Electron Devices;2022-08

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