Self-pulsation in InGaN laser diodes with saturable absorber layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1599622
Reference13 articles.
1. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
2. InGaN/GaN/AIGaN-Based Laser Diodes With an Estimated Lifetime of Longer Than 10,000 Hours
3. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
4. A theoretical analysis of self-sustained pulsation phenomena in narrow-stripe semiconductor lasers
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1. InGaN tandem blue–violet quantum well lasers with high frequency self-pulsations;Optical and Quantum Electronics;2014-06-17
2. Electric Field Induced Carrier Sweep-Out in Tandem InGaN Multi-Quantum-Well Self-Pulsating Laser Diodes;Japanese Journal of Applied Physics;2011-02-07
3. Electric Field Induced Carrier Sweep-Out in Tandem InGaN Multi-Quantum-Well Self-Pulsating Laser Diodes;Japanese Journal of Applied Physics;2011-02-01
4. Intensity Autocorrelation Measurement of 400 nm Picosecond Optical Pulses from a GaInN Mode-Locked Semiconductor Laser Diode Using Surface Second Harmonic Generation of β-BaB2O4Crystal;Applied Physics Express;2010-12-10
5. Blue-Violet Bow-Tie Self-Pulsating Laser Diode with a Peak Power of 20 W and a Pulse Energy of 310 pJ;Applied Physics Express;2010-11-26
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