Arsenic doping of GeSi epitaxial layers grown in the dichlorosilane/germane system
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108448
Reference10 articles.
1. Low-temperature Si and Si:Ge epitaxy by ultrahigh-vacuum/chemical vapor deposition: Process fundamentals
2. Temperature dependence of Si1−xGexepitaxial growth using very low pressure chemical vapor deposition
3. Selective low‐pressure chemical vapor deposition of Si1−xGexalloys in a rapid thermal processor using dichlorosilane and germane
4. GexSil-x Layers Grown by Rapid Thermal Processing Chemical Vapor Deposition
5. Insitudoping of GedxSi1−xwith arsenic by rapid thermal processing chemical vapor deposition
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1. As doping of Si–Ge–Sn epitaxial semiconductor materials on a commercial CVD reactor;Semiconductor Science and Technology;2017-08-17
2. Critical review of the epitaxial growth of semiconductors by rapid thermal chemical vapor deposition;Materials Science and Engineering: R: Reports;1997-06
3. Chemical Vapor Deposition of Epitaxial Silicon‐Germanium from Silane and Germane: II . In Situ Boron, Arsenic, and Phosphorus Doping;Journal of The Electrochemical Society;1995-10-01
4. Chemical Vapor Deposition of Epitaxial Silicon‐Germanium from Silane and Germane: I . Kinetics;Journal of The Electrochemical Society;1995-10-01
5. Phosphorus doping of epitaxial Si and Si1−xGexat very low pressure;Applied Physics Letters;1993-09-20
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