Delta-doped β-Ga2O3 films with narrow FWHM grown by metalorganic vapor-phase epitaxy
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112, USA
2. Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA
Funder
Air Force Office of Scientific Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0027827
Reference39 articles.
1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
2. High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth
3. MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
4. Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
5. Recent progress in Ga2O3power devices
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