Accuracy analysis for the determination of electronic transport properties of Si wafers using modulated free carrier absorption
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3021105
Reference27 articles.
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2. Contactless nondestructive measurement of bulk and surface recombination using frequency-modulated free carrier absorption
3. High‐resolution lifetime mapping using modulated free‐carrier absorption
4. Injection‐level‐dependent recombination velocities at the Si‐SiO2 interface for various dopant concentrations
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