X-ray diffraction measurements of internal strain in Si nanowires fabricated using a self-limiting oxidation process
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference10 articles.
1. Self-limiting oxidation of Si nanowires
2. Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates
3. Si nanostructures formed by pattern-dependent oxidation
4. Fabrication of single-electron transistors and circuits using SOIs
5. Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
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