Impact ionization in Ga1−xAlxSb
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106799
Reference14 articles.
1. Ga<inf>1-x</inf>Al<inf>x</inf>Sb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficients
2. Impact ionization in Ga<inf>1-x</inf>Al<inf>x</inf>Sb: An alternative interpretation
3. A model for impact ionisation in wide-gap semiconductors
4. Theory of steady‐state high‐field hole transport in GaSb and AlxGa1−xSb: The impact ionization resonance
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1. Ab-initio study of Al1–x Ga x Sb compound;Zeitschrift für Kristallographie;2010-11-19
2. Spectral Response Modification Of Quantum Well Infrared Photodetector By Quantum Well Intermixing;MRS Proceedings;2002
3. Molecular beam epitaxy growth of antimonide avalanche photodetectors with InAs/AlSb superlattice as the n-type layer;Journal of Crystal Growth;2000-01
4. Near infrared avalanche photodiodes with bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice gain layers;Journal of Applied Physics;1999-10-15
5. Avalanche photodetector in the GaSb/AlSb/InAs material system by molecular beam epitaxy;SPIE Proceedings;1999-04-07
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