Theory of steady‐state high‐field hole transport in GaSb and AlxGa1−xSb: The impact ionization resonance
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334381
Reference27 articles.
1. Multiplication noise in uniform avalanche diodes
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4. Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio
5. Ga<inf>1-x</inf>Al<inf>x</inf>Sb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficients
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1. First principles calculation of the structural, electronic, optical and elastic properties of the cubic Al Ga1-Sb ternary alloy;Optical Materials;2021-03
2. Extraction of Electron and Hole Ionization Coefficients From Metamorphically Grown InGaSb Diodes;IEEE Transactions on Electron Devices;2009-03
3. Estimates of Impact Ionization Coefficients in Superlattice-Based Mid-Wavelength Infrared Avalanche Photodiodes;MRS Proceedings;2003
4. Band engineering of infrared avalanche photodiodes for improved impact ionization coefficient ratios;Materials for Infrared Detectors;2001-11-12
5. Impact ionization enhancements in AlxGa1−xSb avalanche photodiodes;Applied Physics Letters;2000-11-06
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