Substrate temperature dependence of microcrystallinity in plasma‐deposited, boron‐doped hydrogenated silicon alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94230
Reference9 articles.
1. Characterization of plasma-deposited microcrystalline silicon
2. Thermoelectric power, hall effect and density-of-states measurements on glow-discharge microcrystalline silicon
3. Low‐temperature crystallization of dopeda‐Si:H alloys
4. Nucleation and growth rate ofa‐Si alloys
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1. Highly improved passivation of c-Si surfaces using a gradient i a-Si:H layer;Journal of Applied Physics;2018-04-28
2. Improvement of hydrogenated amorphous silicon germanium thin film solar cells by different p-type contact layer;Materials Science in Semiconductor Processing;2016-01
3. Hydrogen bonding properties in nitrogen doped microcrystalline silicon and amorphous silicon prepared using highly diluted silane;Thin Solid Films;2000-12
4. Preparation ofp‐type silicon films by plasma decomposition of a SiH4/H2/BF3gas mixture;Journal of Applied Physics;1993-10
5. Thin boron doped microcrystalline silicon films;Solar Energy Materials and Solar Cells;1993-07
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