Preparation ofp‐type silicon films by plasma decomposition of a SiH4/H2/BF3gas mixture
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354380
Reference12 articles.
1. Electronic properties of substitutionally doped amorphous Si and Ge
2. Boron Doping of Hydrogenated Silicon Thin Films
3. Substrate temperature dependence of microcrystallinity in plasma‐deposited, boron‐doped hydrogenated silicon alloys
4. Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma
5. Very-Low-Temperature Preparation of Poly-Si Films by Plasma Chemical Vapor Deposition Using SiF4/SiH4/H2Gases
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron Collision Cross Sections for the BF3Molecule and Electron Transport Coefficients in BF3–Ar and BF3–SiH4Mixtures;Journal of the Physical Society of Japan;2013-03-15
2. Real time spectroscopic ellipsometry studies of the nucleation and growth of p-type microcrystalline silicon films on amorphous silicon using B2H6, B(CH3)3 and BF3 dopant source gases;Journal of Applied Physics;1999-04-15
3. Mechanism of low‐temperature polycrystalline silicon growth from a SiF4/SiH4/H2plasma;Journal of Applied Physics;1995-01-15
4. Optical properties of hydrogenated amorphous silicon films doped with fluorinated gases;Journal of Non-Crystalline Solids;1995-01
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