Atomic-scale observation of interfacial roughness and As–P exchange in InGaAs/InP multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1758784
Reference16 articles.
1. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
2. Interfacial properties of very thin GaInAs/InP quantum well structures grown by metalorganic vapor phase epitaxy
3. InAsP islands at the lower interface of InGaAs/InP quantum wells grown by metalorganic chemical vapor deposition
4. X-ray interference method for studying interface structures
5. X-ray CTR scattering measurement of InP/InGaAs/InP interface structures fabricated by different growth processes
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3. Strain mapping at the interface of InP/In x Ga1-x As/InP as measured by the scanning transmission electron microscope-moiré fringe method;Applied Physics Express;2019-10-01
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