Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy-Reference-Cited by-同舟云学术

Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy

Published:2018-10-03 Issue:10 Volume:12 Page:10374-10382
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Yang Inseok^ORCID,Zhang Xu¹,Zheng Changlin²,Gao Qian,Li Ziyuan^ORCID,Li Li,Lockrey Mark N.,Nguyen Hieu^ORCID,Caroff Philippe,Etheridge Joanne²^ORCID,Tan Hark Hoe,Jagadish Chennupati,Wong-Leung Jennifer^ORCID,Fu Lan^ORCID

Affiliation:

1. National Center for International Joint Research of Electronic Materials and Systems, Henan Key Laboratory of Laser and Opto-electric Information Technology, School of Information Engineering, Zhengzhou University, Zhengzhou 450052, People’s Republic of China

2. Monash Centre for Electron Microscopy, Monash University, 10 Innovation Walk, Clayton, Victoria 3800, Australia

Funder

Australian Research Council

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.8b05771

Reference35 articles.

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2. New approach to the high quality epitaxial growth of lattice‐mismatched materials