Mode management in Bottom‐Up, Parity‐Time‐Symmetric Micro‐Cavity Lasers

Abstract

AbstractThe intrinsic non‐Hermiticity of photonic devices with tunable optical gain and loss makes them excellent platforms to explore and implement applications based on parity‐time symmetry, and a notable example is mode management in micro‐cavity lasers. Thus far, parity‐time‐symmetric lasers are fabricated via conventional top‐down etching processes, which are known to cause cavity sidewall roughness that is potentially detrimental to laser performance. Bottom‐up fabrication of parity‐time‐symmetric lasers, however, has seen limited success due to strict requirements on the uniformity of cavity morphology. Here, parity‐time‐symmetric lasing is demonstrated in coupled InP micro‐ring cavities grown directly by selective area epitaxy. With a facet engineering technique, ring laser cavities with a highly deterministic morphology are realized, enabling parity‐time‐symmetric laser designs. Furthermore, benefiting from the versatility and controllability of this bottom‐up process, lasing mode selectivity can be enhanced through coupling gap tuning and cavity shape engineering, leading to single‐mode lasing with a peak side mode suppression ratio exceeding 17 dB and a threefold single‐mode brightness enhancement compared to a single, uncoupled laser cavity. This work unlocks a lasing mode management strategy that is previously unavailable to bottom‐up laser cavities, which is a major step toward the realization of on‐chip, low‐loss, and single‐mode micro‐cavity lasers.