Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure-Reference-Cited by-同舟云学术

Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

Published:2019-11-14 Issue:18 Volume:126 Page:183104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Shalygin V. A.¹^ORCID,Moldavskaya M. D.¹,Vinnichenko M. Ya.¹,Maremyanin K. V.²,Artemyev A. A.¹,Panevin V. Yu.¹,Vorobjev L. E.¹,Firsov D. A.¹,Korotyeyev V. V.³^ORCID,Sakharov A. V.⁴,Zavarin E. E.⁴,Arteev D. S.⁴,Lundin W. V.⁴,Tsatsulnikov A. F.⁵,Suihkonen S.⁶,Kauppinen C.⁶^ORCID

Affiliation:

1. Department of Physics of Semiconductors and Nanoelectronics, Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya Str., St. Petersburg 195251, Russia

2. Institute for Physics of Microstructures of RAS, Nizhny Novgorod 603950, Russia

3. Department of Theoretical Physics, Institute of Semiconductor Physics NASU, Kyiv 03028, Ukraine

4. Ioffe Institute, 26 Polytechnicheskaya Str., St. Petersburg 194021, Russia

5. Submicron Heterostructures for Microelectronics Research and Engineering Center of RAS, 26 Polytechnicheskaya Str., St. Petersburg 194021, Russia

6. Department of Electronics and Nanoengineering, Aalto University, P.O. Box 13500, Aalto FI-00076, Finland

Funder

Russian Foundation for Basic Research

Ministry of Science and Higher Education of the Russian Federation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5118771

Reference26 articles.

1. Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

2. Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems

3. Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current

4. Transformation of the plasmon spectrum in a grating-gate transistor structure with spatially modulated two-dimensional electron channel

5. Far infrared emission from plasma oscillations of Si inversion layers

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