High-temperature gold metallization for ZnO nanowire device on a SiC substrate-Reference-Cited by-同舟云学术

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High-temperature gold metallization for ZnO nanowire device on a SiC substrate

Published:2012-06-15 Issue:12 Volume:111 Page:124307
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Gurwitz Ron,Tuboul Guy,Shikler Boaz,Shalish Ilan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4729802

Reference19 articles.

1. Improved performance of ZnO nanowire field-effect transistors via focused ion beam treatment

2. Temperature dependent properties of InSb and InAs nanowire field-effect transistors

3. Individual SnO2nanowire transistors fabricated by the gold microwire mask method

4. Piezoelectric Effect on the Electronic Transport Characteristics of ZnO Nanowire Field-Effect Transistors on Bent Flexible Substrates

5. Enhanced Electrical Conductance of ZnO Nanowire FET by Nondestructive Surface Cleaning

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. One-Dimensional Nanosystems;Series in Material Science and Engineering;2016-03-31

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