Improved performance of ZnO nanowire field-effect transistors via focused ion beam treatment-Reference-Cited by-同舟云学术

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Improved performance of ZnO nanowire field-effect transistors via focused ion beam treatment

Published:2011-08-18 Issue:37 Volume:22 Page:375201
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Liao Zhi-Min,Lu Yi,Wu Han-Chun,Bie Ya-Qing,Zhou Yang-Bo,Yu Da-Peng

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/22/i=37/a=375201/pdf

Reference21 articles.

1. Tunable Electronic Transport Characteristics of Surface-Architecture-Controlled ZnO Nanowire Field Effect Transistors

2. ZnO nanowire field-effect transistor and oxygen sensing property

3. High-performance ZnO nanowire field effect transistors

4. High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment

5. Passivation effects on ZnO nanowire field effect transistors under oxygen, ambient, and vacuum environments

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