Electronic properties of Ge dangling bond centers at Si1−xGex/SiO2 interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3266853
Reference14 articles.
1. Interface traps and dangling-bond defects in (100)Ge∕HfO2
2. Dangling-bond defects and hydrogen passivation in germanium
3. Defect levels of dangling bonds in silicon and germanium through hybrid functionals
4. Nontrigonal Ge dangling bond interface defect in condensation-grown(100)Si1−xGex/SiO2
5. First-principles study of the electronic properties of Ge dangling bonds at (100)Si1−xGex/SiO2 interfaces
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1. Dangling bond defects in silicon-passivated strained-Si1−xGex channel layers;Journal of Materials Science: Materials in Electronics;2019-03-19
2. Effects of additional oxidation after Ge condensation on electrical properties of germanium-on-insulator p-channel MOSFETs;Solid-State Electronics;2016-03
3. Charge transition level of GePb1 centers at interfaces of SiO2 /Ge x Si1−x /SiO2 heterostructures investigated by positron annihilation spectroscopy;physica status solidi (b);2014-09-24
4. Hydrogen interaction kinetics of Ge dangling bonds at the Si0.25Ge0.75/SiO2 interface;Journal of Applied Physics;2014-07-28
5. Comparative analysis of thermally induced degradation of condensation-grown (100)Ge0.75Si0.25/SiO2 interfaces by electron spin resonance;Applied Surface Science;2014-02
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