First-principles study of the electronic properties of Ge dangling bonds at (100)Si1−xGex/SiO2 interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3253707
Reference27 articles.
1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
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3. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
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Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hydrogen interaction kinetics of Ge dangling bonds at the Si0.25Ge0.75/SiO2 interface;Journal of Applied Physics;2014-07-28
2. Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GexSi1−x/SiO2/(100)Si structures with nm-thin GexSi1−x layers;Applied Surface Science;2014-02
3. Chemical kinetics of the hydrogen-GePb1 defect interaction at the (100)GexSi1−x/SiO2 interface;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-01
4. Electron Spin Resonance of Interfaces and Nanolayers in Semiconductor Heterostructures;Characterization of Semiconductor Heterostructures and Nanostructures;2013
5. Electron spin resonance features of the Ge Pb1 dangling bond defect in condensation-grown (100)Si/SiO2/Si1−xGex/SiO2 heterostructures;Journal of Applied Physics;2012-10
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