Strain-induced vertical self-organization of semiconductor quantum dots: A computational study
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4858382
Reference30 articles.
1. Structural properties of self-organized semiconductor nanostructures
2. Temperature dependence of the photoluminescence spectra from InAs(P)/InP multilayers containing thick quantum dots: Dot-size-dependent carrier dynamics
3. Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)
4. Mechanism of organization of three-dimensional islands in SiGe/Si multilayers
5. Self-Organization ofInAs/InPQuantum Dot Multilayers: Pseudophase Diagram Describing the Transition from Aligned to Antialigned Structures
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1. Optical measurement of a quantum dot state in a microdisk by a Stark transducer;Laser Physics Letters;2022-06-27
2. Stress-determined nucleation sites above GaAs-capped arrays of InAs quantum dots;Journal of Applied Physics;2016-09-28
3. Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium;Semiconductors;2015-01
4. Investigation of deformations and strain fields in silicon matrix structures embedded with vertically stacked Ge(Si) self-assembled islands;Applied Physics Letters;2014-10-20
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