Understanding carrier lifetime measurements at nonuniform recombination
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4864789
Reference17 articles.
1. Limitations on dynamic excess carrier lifetime calibration methods
2. Nondestructive depth profiling of carrier lifetimes in full silicon wafers
3. Contactless nondestructive measurement of bulk and surface recombination using frequency-modulated free carrier absorption
4. High‐resolution lifetime mapping using modulated free‐carrier absorption
5. Infrared photocarrier radiometry of semiconductors: Physical principles, quantitative depth profilometry, and scanning imaging of deep subsurface electronic defects
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1. Fully nonlinear photocarrier radiometry / modulated photoluminescence dynamics in semiconductors: Theory and applications to quantitative deconvolution of multiplexed photocarrier density wave interference and recombination processes;Journal of Luminescence;2021-08
2. A Dynamic Calibration Method for Injection‐Dependent Charge Carrier Lifetime Measurements;Small Methods;2021-07-24
3. Review of injection dependent charge carrier lifetime spectroscopy;Progress in Energy;2021-01-01
4. Extracting Metal Contact Recombination Parameters From Effective Lifetime Data;IEEE Journal of Photovoltaics;2018-11
5. Surface recombination velocity imaging of wet-cleaned silicon wafers using quantitative heterodyne lock-in carrierography;Applied Physics Letters;2018-01
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