Unraveling the effect of electron-electron interaction on electronic transport in La-doped SrSnO3 films
Author:
Affiliation:
1. Department of Chemical Engineering and Materials Science University of Minnesota, Minneapolis, Minnesota 55455, USA
Funder
National Science Foundation
Air Force Office of Scientific Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5113522
Reference36 articles.
1. High mobility field effect transistor based on BaSnO3 with Al2O3 gate oxide
2. All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3
3. High-mobility BaSnO3thin-film transistor with HfO2gate insulator
4. High field-effect mobility at the (Sr,Ba)SnO3/BaSnO3 interface
5. Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET
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