All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3-Reference-Cited by-同舟云学术

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All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3

Published:2015-03 Issue:3 Volume:3 Page:036101
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Kim Useong,Park Chulkwon,Ha Taewoo,Kim Young Mo,Kim Namwook,Ju Chanjong,Park Jisung,Yu Jaejun,Kim Jae Hoon,Char Kookrin

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/aplmater/3/3/1.4913587.pdf?itemId=/content/aip/journal/aplmater/3/3/10.1063/1.4913587&mimeType=pdf&containerItemId=content/aip/journal/aplmater

Reference22 articles.

1. Oxide Interfaces—An Opportunity for Electronics

2. Interface Physics in Complex Oxide Heterostructures

3. Emergent phenomena at oxide interfaces

4. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures

5. Electric field control of the LaAlO3/SrTiO3 interface ground state

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1. Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy;Advanced Electronic Materials;2024-09-11

2. Ferroelectric switching and field effect of Pb(Zr0.7Ti0.3)O3 on Ba1−xLaxSnO3;Physical Review Materials;2024-08-07

3. Electric field control of the energy gap in ZnO and BaSnO3 films grown on PMN-PT;Applied Physics Letters;2024-07-01

4. Epitaxially Stacked 12‐Layer Perovskite Oxide Heterostructure as a Double‐Level Double‐Gate Field‐Effect Transistor;Advanced Functional Materials;2024-03-22

5. Micron-scale FETs of fully epitaxial perovskite oxides using chemical etching;Materials Today Quantum;2024-03

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