Monte Carlo transport analysis to assess intensity dependent response of a carbon-doped GaN photoconductor-Reference-Cited by-同舟云学术

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Monte Carlo transport analysis to assess intensity dependent response of a carbon-doped GaN photoconductor

Published:2021-05-21 Issue:19 Volume:129 Page:195703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Milestone W.¹^ORCID,Guo D.¹^ORCID,Sanati M.²^ORCID,Dowling K. M.³^ORCID,Hau-Riege S.³,Voss L. F.³^ORCID,Conway A.³,Joshi R. P.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USA

2. Department of Physics and Astronomy, Texas Tech University, Lubbock, Texas 79409, USA

3. Lawrence Livermore National Laboratory, 7000 East Ave., Livermore, California 94550, USA

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0040173

Reference81 articles.

1. Picosecond optoelectronic switching and gating in silicon

2. Analysis of high field effects on the steady-state current-voltage response of semi-insulating 4H-SiC for photoconductive switch applications

3. Design and characterization of silicon carbide photoconductive switches for high field applications

4. 4H–SiC photoconductive switching devices for use in high-power applications

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