Analysis of high field effects on the steady-state current-voltage response of semi-insulating 4H-SiC for photoconductive switch applications
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529, USA
2. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USA
Funder
Air Force Office of Scientific Research (AFOSR)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4929809
Reference67 articles.
1. Silicon carbide high-power devices
2. Microwave photoconductivity decay characterization of high-purity 4H-SiC substrates
3. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
4. Picosecond optoelectronic switching and gating in silicon
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