In situ chemical and structural investigations of the oxidation of Ge(001) substrates by atomic oxygen
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2337543
Reference13 articles.
1. HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition
2. Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge
3. HfO2 high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability
4. Surface termination and roughness of Ge(100) cleaned by HF and HCl solutions
5. The Ge(001) surface
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