Reduction of apparent dopant concentration in the surface space charge layer of oxidized silicon by ionizing radiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95407
Reference15 articles.
1. Generation‐annealing kinetics and atomic models of a compensating donor in the surface space charge layer of oxidized silicon
2. Deactivation of the boron acceptor in silicon by hydrogen
3. Bulk acceptor compensation produced inp‐type silicon at near‐ambient temperatures by a H2O plasma
4. Gate‐width dependence of radiation‐induced interface traps in metal/SiO2/Si devices
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