Investigation of the interface trap density and series resistance of a high-kHfO2-based MOS capacitor: before and after 50 MeV Li3+ion irradiation-Reference-Cited by-同舟云学术

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Investigation of the interface trap density and series resistance of a high-kHfO2-based MOS capacitor: before and after 50 MeV Li3+ion irradiation

Published:2011-02 Issue:2 Volume:166 Page:80-88
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Singh Vikram,Shashank N.,Kumar Dinesh,Nahar Rajender

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420150.2010.487904

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of ionizing radiation on admittance measurements of Au/TiO2/n-Si (MIS) capacitor;Journal of Materials Science: Materials in Electronics;2024-02

2. Effect of annealing temperature on the electrical characteristics of Al/Er2O3/n-Si/Al MOS capacitors;Journal of Alloys and Compounds;2021-05

3. Effect of oxide and interface traps on electrical characteristics of post-deposition annealed HfSiO4/n-Si structures;Semiconductor Science and Technology;2021-02-26

4. Structure evolution, bandgap, and dielectric function in La-doped hafnium oxide thin layer subjected to swift Xe ion irradiation;Journal of Applied Physics;2020-10-28

5. Impact and origin of the oxide-interface traps in Al/Yb2O3/n-Si/Al on the electrical characteristics;Journal of Alloys and Compounds;2020-06

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