Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments-Reference-Cited by-同舟云学术

Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments

Published:2009-02-02 Issue:5 Volume:94 Page:051904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Novikov P. L.,Le Donne A.,Cereda S.,Miglio Leo,Pizzini S.,Binetti S.,Rondanini M.,Cavallotti C.,Chrastina D.,Moiseev T.,von Känel H.,Isella G.,Montalenti F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3077187

Reference16 articles.

1. Thin-Film Silicon –Growth Process and Solar Cell Application–

2. Modeling of radical-surface interactions in the plasma-enhanced chemical vapor deposition of silicon thin films

3. Interplay of physical and chemical aspects in the PECVD and etching of thin solid films

4. Photovoltaic Technology: The Case for Thin-Film Solar Cells

5. Quantitative estimate of H abstraction by thermalSiH3on hydrogenatedSi(001)(2×1)

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