Spin‐orbit band effects on silicon hot‐hole transport
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341256
Reference11 articles.
1. Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature
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4. Hole drift velocity in silicon
5. The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
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3. Analysis of high‐field hole transport characteristics in Si1−xGexalloys with a bond orbital band structure;Journal of Applied Physics;1996-01
4. Theoretical investigation of wave‐vector‐dependent analytical and numerical formulations of the interband impact‐ionization transition rate for electrons in bulk silicon and GaAs;Journal of Applied Physics;1994-09-15
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