Theoretical investigation of wave‐vector‐dependent analytical and numerical formulations of the interband impact‐ionization transition rate for electrons in bulk silicon and GaAs-Reference-Cited by-同舟云学术

Theoretical investigation of wave‐vector‐dependent analytical and numerical formulations of the interband impact‐ionization transition rate for electrons in bulk silicon and GaAs

Published:1994-09-15 Issue:6 Volume:76 Page:3542-3551
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kolník Ján,Wang Yang,Oğuzman Ismail H.,Brennan Kevin F.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.357412

Reference43 articles.

2. Theory of Electron Multiplication in Silicon and Germanium

3. Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors

4. Impact ionization in narrow gap semiconductors

5. Hybrid method for hot electron calculations

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