Photoluminescence of acceptor states in mercury implanted gallium arsenide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351142
Reference4 articles.
1. Annealing of zinc‐implanted GaAs
2. Abrupt p+ layers in GaAs by 200°C mercury implantation
3. Transient annealing for the production of n+ contact layers in GaAs
4. The incorporation and characterisation of acceptors in epitaxial GaAs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Novel features of photoluminescence spectra from acceptor-doped GaAs: formation of acceptor—acceptor pair emissions and optical compensation effect;Materials Science and Engineering: R: Reports;1996-06
2. High‐energy implantation of Hg+ ions into GaAs grown by liquid encapsulated Czochralski method: Formation of multiple shallow emissions;Applied Physics Letters;1995-11-06
3. Photoluminescence investigation of Hg acceptor in GaAs;Applied Physics Letters;1995-09-04
4. High-Energy Ion-Implantation of a Moderately Deep Acceptor Hg Into Liquid Encapsulated Czochralski Grown GaAs : Formation of New Shallow Emission Bands;MRS Proceedings;1995
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