Influence of O and C co-implantation on the lattice site of Er in GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1756196
Reference17 articles.
1. Three-color integration on rare-earth-doped GaN electroluminescent thin films
2. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon
3. Direct Evidence for Tetrahedral Interstitial Er in Si
4. Lattice location and optical activation of rare earth implanted GaN
5. Photo-, cathodo-, and electroluminescence from erbium and oxygen co-implanted GaN
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