Macroscopic migration of implanted deuterium along a gas-bubble network in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371164
Reference8 articles.
1. Ring-like craters in single-crystal Si, Ge, and GaAs by deuterium-ion implantation
2. Silicon on insulator material technology
3. On the mechanism of the hydrogen-induced exfoliation of silicon
4. Hydrogen-implant induced exfoliation of silicon and other crystals
5. Hydrogen plasma induced defects in silicon
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Substructures of Gas-Ion-Irradiation-Induced Surface Blisters in Silicon Studied by Cross-Sectional Transmission Electron Microscopy;MATERIALS TRANSACTIONS;2005
2. Real-time measurement of implanted deuterons by using the nuclear reaction H(d,p)H;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-05
3. Non-destructive structural analysis of surface blistering by TEM and EELS in a reflection configuration;Journal of Nuclear Materials;2001-03
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