Ring-like craters in single-crystal Si, Ge, and GaAs by deuterium-ion implantation-Reference-Cited by-同舟云学术

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Ring-like craters in single-crystal Si, Ge, and GaAs by deuterium-ion implantation

Published:1994-11 Issue:1 Volume:195 Page:99-104
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Tagishi Yoshihiro,Katabuchi Tatuya

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference5 articles.

1. Superstoichiometry, accelerated diffusion, and nuclear reactions in deuterium-implanted palladium

2. Differential cross sections at low energies forH2(d,p)3H andH2(d,n)3He

3. The stopping of ions in compounds

4. The stopping and range of ions in solids;Ziegler,1985

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Real-time measurement of implanted deuterons by using the nuclear reaction H(d,p)H;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-05

2. Macroscopic migration of implanted deuterium along a gas-bubble network in silicon;Journal of Applied Physics;1999-09-15

3. Influence of deuterium implanted in materials surface on Balmer lines emission from backscattering deuterium;Journal of Nuclear Materials;1999-03

4. Radiation effects of 20-100 keV deuterium ions in silicon;Ion Beam Modification of Materials;1996

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