Symmetry properties and anisotropic excitonic response for GaN films grown on semipolar (11−22)-, (10−11)-, and (10−13)-oriented GaN substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2715003
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1. Spontaneous polarization and piezoelectric constants of III-V nitrides
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5. Internal electric field in wurtziteZnO∕Zn0.78Mg0.22Oquantum wells
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2. The calculation of semipolar orientations for wurtzitic semiconductor heterostructures: application to nitrides and oxides;Semiconductor Science and Technology;2012-01-19
3. IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES;International Journal of Modern Physics B;2010-10-30
4. The Reduction of Elastic Energy Density in InN Growth on (hkl)-Oriented Planes;Japanese Journal of Applied Physics;2009-05-20
5. Semipolar III Nitride Semiconductors: Crystal Growth, Device Fabrication, and Optical Anisotropy;MRS Bulletin;2009-05
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