Strain effect on intersubband transition in a GaN/AlGaN single quantum well on arbitrary crystal planes-Reference-Cited by-同舟云学术

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Strain effect on intersubband transition in a GaN/AlGaN single quantum well on arbitrary crystal planes

Published:2018-07-17 Issue:8 Volume:50 Page:
ISSN:0306-8919
Container-title:Optical and Quantum Electronics
language:en
Short-container-title:Opt Quant Electron

Author:

Kang Jianbin^ORCID,Li Qian,Wang Wangping,Chen Feiliang,Li Mo,Wang Lai,Luo Yi,Zhang Jian

Funder

Science Challenge Project

National Natural Science Foundation of China

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s11082-018-1572-3/fulltext.html

Reference16 articles.

1. Ambacher, O., Majewski, J., Miskys, C., Link, A., Hermann, M., Eickhoff, M., Stutzmann, M., Bernardini, F., Fiorentini, V., Tilak, V., Schaff, B., Eastman, L.F.: Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures. J. Phys. Condens. Matter 14(13), 3399–3434 (2002)

2. Cicek, E., Vashaei, Z., McClintock, R., Bayram, C., Razeghi, M.: Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates. Appl. Phys. Lett. 96(26), 261107 (2010)

3. Fasol, G.: Room-temperature blue gallium nitride laser diode. Science 272, 1751–1752 (1996)

4. Fu, H.Q., Lu, Z.J., Huang, X.Q., Chen, H., Zhao, Y.J.: Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications. J. Appl. Phys. 119(17), 174502 (2016)

5. Gil, B.: Symmetry properties and anisotropic excitonic response for GaN films grown on semipolar (11–22), (10–11), and (10–13) oriented GaN substrates. Appl. Phys. Lett. 90(12), 121903 (2007)

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