IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES

Abstract

Using the effective-mass Hamiltonian for an arbitrary direction wurtzite semiconductor on the basis of k⋅p theory, we investigate the strain effects on the optical anisotropy in semi-polar and nonpolar GaN planes. The optical matrix elements are formulated for an arbitrary direction and calculated for the A- and R-planes. It is found that giant optical anisotropy appears in the A- and R-planes and the biaxial strain significantly changes the polarization properties.