Improved spatial resolution diffusion length measurements in imperfect silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331643
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Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Grain Boundaries in Multicrystalline Silicon. Characterization by Admittance and EBIC Measurements;Physica Status Solidi (a);1993-06-16
2. Investigation of the reversibility of deformation in silicon sheets;Journal of Electronic Materials;1990-09
3. EBIC contrast of defects in cadmium telluride. I. Experiments;Philosophical Magazine B;1987-05
4. Progress in Development of Efg Process Control in Silicon Ribbon Production for Photovoltaic Applications;Silicon Processing for Photovoltaics II;1987
5. The interpretation of EBIC images using Monte Carlo simulations;Journal of Microscopy;1986-09
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