Advances in the electrical assessment of semiconductors using the scanning electron microscope-Reference-Cited by-同舟云学术

Advances in the electrical assessment of semiconductors using the scanning electron microscope

Published:1980-03 Issue:3 Volume:118 Page:275-290
ISSN:0022-2720
Container-title:Journal of Microscopy
language:en
Short-container-title:

Author:

Davidson S. M.,Dimitriadis C. A.

Publisher

Wiley

Subject

Histology,Pathology and Forensic Medicine

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1365-2818.1980.tb00274.x/fullpdf

Reference17 articles.

1. Theory of lifetime measurements with the scanning electron microscope: steady state;Berz;Solid State Electron.,1976

2. Dislocation limited minority carrier lifetime in n-type GaP;Blenkinsop;Electron. Lett.,1976

3. Semiconductor material assessment by scanning electron microscopy;Davidson;J. Microsc.,1977

4. Injection and doping dependence of SEM and scanning light spot diffusion length measurements in silicon power rectifiers;Davidson;Solid State Electron.,1979

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