EBIC contrast of defects in cadmium telluride. I. Experiments-Reference-Cited by-同舟云学术

EBIC contrast of defects in cadmium telluride. I. Experiments

Published:1987-05 Issue:5 Volume:55 Page:575-583
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Sieber B.¹²,Philibert J.¹³

Affiliation:

1. a Laboratoire de Physique des Matériaux, CNRS , 1 Place Aristide Briand, 92190, Meudon–Bellevue , France

2. b Laboratoire de Structure et Propriétés de ľEtat Solide , Université des Sciences et Techniques de Lille Flandres Artois , Bǎtiment C6, B.P. 36, 59650, Villeneuve d'Ascq , France

3. c Laboratoire de Métallurgie Physique , Université Paris-Sud , Bǎtiment 413, 91405, Orsay , Cedex , France

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818708218345

Reference34 articles.

1. Electron beam‐induced current in direct band‐gap semiconductors

2. Electron‐beam‐induced current determination of minority‐carrier diffusion length and surface recombination velocity in mercury‐cadmium‐telluride

3. Improved spatial resolution diffusion length measurements in imperfect silicon

4. Combined scanning (EBIC) and transmission electron microscopic investigations of dislocations in semiconductors

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4. Stem-Stebic Technique for Defect Investigation in Semiconductor Photovoltaic Materials;Tenth E.C. Photovoltaic Solar Energy Conference;1991

5. EBIC contrast theory of dislocations : intrinsic recombination properties;Revue de Physique Appliquée;1990