Electrostatic force microscopy study about the hole trap in thin nitride/oxide/semiconductor structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2904646
Reference13 articles.
1. Charge trapping properties at silicon nitride/silicon oxide interface studied by variable-temperature electrostatic force microscopy
2. Charge storage in a nitride‐oxide‐silicon medium by scanning capacitance microscopy
3. Conductive-Mode Atomic Force Microscopy Study of Amorphous Silicon Nitride Thin Films
4. Quantitative evaluation of local charge trapping in dielectric stacked gate structures using Kelvin probe force microscopy
5. Performance Improvement of SONOS Memory by Bandgap Engineering of Charge-Trapping Layer
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