Identification of lifetime limiting defects by temperature- and injection-dependent photoluminescence imaging-Reference-Cited by-同舟云学术

Identification of lifetime limiting defects by temperature- and injection-dependent photoluminescence imaging

Published:2016-09-08 Issue:10 Volume:120 Page:105703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Schön Jonas¹,Youssef Amanda²,Park Sungeun³,Mundt Laura E.¹,Niewelt Tim¹,Mack Sebastian¹,Nakajima Kazuo⁴,Morishita Kohei⁵,Murai Ryota⁴,Jensen Mallory A.²,Buonassisi Tonio²,Schubert Martin C.¹

Affiliation:

1. Fraunhofer Institute for Solar Energy Systems, Heidenhofstraβe 2, D-79110 Freiburg, Germany

2. Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

3. Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 136-713, South Korea

4. FUTURE-PV Innovation, Koriyama, Fukushima 963-0215, Japan

5. Kyoto University, Yoshida-Honmachi, Sakyo-Ku, Kyoto 606-8501, Japan

Funder

National Science Foundation (NSF)

U.S. Department of Energy (DOE)

Bundesministerium für Wirtschaft und Energie (BMWi)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4961465

Reference19 articles.

1. Imaging of Metastable Defects in Silicon

2. Imaging of chromium point defects in p-type silicon

3. Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence

4. Boron-oxygen defect imaging in p-type Czochralski silicon

5. K. Graff , Metal Impurities in Silicon-Device Fabrication ( Springer, Berlin, 1999).

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