Boron-oxygen defect imaging in p-type Czochralski silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4819096
Reference11 articles.
1. Electronically activated boron-oxygen-related recombination centers in crystalline silicon
2. Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy
3. Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon
4. Photoluminescence imaging of silicon wafers
5. Imaging of Metastable Defects in Silicon
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